Welcome to Christoph Grein's Home Page
Professor of Physics
Director of
Graduate Studies
Associate
Director of Microphysics
Laboratory
Address
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Physics Department M/C273 |
Tel.: (312)996-6753 |
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Fax: (312)996-9016 |
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e-mail: grein@uic.edu
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Research Interests
Semiconductor superlattice based infrared detectors and lasers;
Ab initio calculations of
material properies;
Molecular beam epitaxial growth simulations;
Quantum transport in mesoscopic systems
Curriculum Vitae
I received a Ph.D. in theoretical condensed matter physics at Princeton University. This was followed by two years postdoctoral work at the Max Planck Institut fur Festkorperforschung in Stuttgart, and another year and a half of postoctoral work at Harvard University.
Recent publications
“Midwave
Infrared InAs/GaSb Strained Layer Superlattice Hole
Avalanche Photodiode”, Siddhartha Ghosh , Shubhrangshu Mallick , Elena Plis , Sanjay Krishna , Christoph Grein, Appl. Phys. Lett. 94, 201107 (2009)
“Recombination Properties of Narrow-Gap Bulk
and Superlattice Semiconductors”, C.H. Grein, Proceedings of Advanced Infrared
Technology and Applications 2007,
“Frank dislocation loops in HgTe/CdTe superlattices on CdTe/S (211B) substrates” L. F. Fu, N. L. Okamoto, M. F. Chi, N. D. Browning, H. S. Jung, and C. H. Grein, J. Appl. Phys 104 (2008)
“Single
Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode
using InAs-GaSb Strained Layer Superlattice” Koushik
Banerjee, Shubhrangshu Mallick, Siddhartha Ghosh, Elena Plis,
Jean Baptiste Rodriguez, Sanjay Krishna, Christoph
Grein, Materials and Devices for Laser Remote Sensing and Optical
Communication, edited by Astrid Aksnes and Farzin Amzajerdian (Mater. Res.
Soc. Symp. Proc. Volume 1076, Warrendale , PA
“Theory and modeling of type-II strained-layer superlattice Detectors”
M.E. Flatte and C.H. Grein, SPIE Proceedings 7222-23
(2009)
“Carrier Recombination Lifetime Characterization of MBE-Grown HgCdTe”, Y. Chang, C.H. Grein, J. Zhao, S. Sivananthan M.E. Flatte and P.–K. Liao and F. Aqariden, Appl. Phys. Lett. 93, 192111 (2008)
“Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg1-xCdxTe
superlattices and FIR detector applications”, C. R. Becker; K. Ortner; V. Latussek;
C. H. Grein; S. Sivananthan, SPIE
Proceedings 7082 (2008)
“First principles calculation of Stillinger-Weber potential parameters for InN”, C. Fulk, W. Walkosz, A. Chatterjee, S. Ogut, C.H. Grein and P.W. Chung, J. Vacuum Sci and Technol. A, 26, 193 (2008)
“Low noise mid-wavelength infrared avalanche photodiodes”, S. Ghosh, S. Mallik, K. Banerjee, C. Grein, S. Velicu, J. Zhao, D. Silversmith, J.B. Rodriguez, E. Plis, and S. Krishna, J. Electron. Mater 37, 1764 (2008)
“Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy”, Xiaojin Wang, C. Fulk, Fanghai Zhao, Donghui Li, Shaibal Mukherjee, Yong Chang, R. Sporken, R. Klie, Z.Shi, C.H. Grein, S. Sivananthan, J. Electron. Mater 37, 1200 (2008)
“Avalanche mechanism in p+-n- -n+ and p+-n mid wavelength infrared Hg1-xCdxTe diodes on Si substrates”, Shubhrangshu Mallick, Koushik Banerjee, Silviu Velicu, Siddhartha Ghosh, Jun Zhao, and C.H. Grein, J. Electron. Mater. 37, 1488 (2008)
“Surface Morphology and Defect Formation Mechanism of Molecular Beam Epitaxy-Grown HgCdTe”, Y. Chang, J. Zhao, C.H. Grein, C. Fulk, R. Sporken, R. Kiran, S.Y. An, S. Mallick and S. Sivananthan, T. Aoki, C.Z. Wang and David J. Smith, S. Velicu, J. Crocco, Y. Chen, G. Brill, Wijewarnasuriya and N. Dhar, J.D. Benson and V. Nathan , J. Electron. Mater. 37, 1171 (2008)
“Modeling of Recombination in HgCdTe”, C.H.
“Thermoelectric characteristics of HgCdTe-based superlattices”, S. Velicu, C.H. Grein, J. Zhao, Y. Chang, S.-Y. An, K. Pipe, A.Yadav, J. Electron. Mater. 37, 1504 (2008)
“Non-Equilibrium Operation of
Arsenic-Diffused LWIR HgCdTe Photodiodes” P. Wijewarnasuriya, G.
Brill, Y. Chen, N. K. Dhar,, P. Y. Emelie, S. Velicu,
C. Grein, S. Sivananthan, A. D'Souza and M. G. Stapelbroek,
J. Electron. Mater 37, 1283 (2008)
“Modeling of LWIR HgCdTe Infrared Detectors Under Non-Equilibrium Operation”, P.Y. Emelie, S. Velicu, C.H. Grein, J.D. Phillips, P.S. Wijewarnasuriya and N.K. Dhar, J. Electron. Mater. 37, 1362 (2008)
“Ultralow Noise Mid Wave Infrared InAs-GaSb Strain Layer Superlattice Avalanche Photodiode”,
Siddhartha Ghosh, Shubhrangshu Mallick, Koushik Banerjee, Jean-Baptiste Rodriguez , Sanjay Krishna , Christoph Grein,
Applied Phys. Lett. 91, 241111 (2007)
“Uniformity studies of inductively
coupled plasma etching in fabrication of HgCdTe detector arrays” R. Bommena, S. Velicu, P. Boieriu, T.S. Lee,
“Pronounced Auger Suppression in Long Wavelength HgCdTe Devices Grown by Molecular Beam Epitaxy”, Priyalal S. Wijewarnasuriya, Gregory Brill, Yuanpin Chen, Nibir K. Dhar, Chris Grein, HyeSon Jung, Silviu Velicu, Sivalingam Sivananthan, Arvind D’Souza, Maryn G. Stapelbroek and John Reekstin, Proc. SPIE Infrared Technology and Applications 6542 (2007)
“Molecular Beam Epitaxy Growth of HgCdTe for High Performance Infrared Photon Detectors”, Y. Chang, C. Fulk, J. Zhao, C.H. Grein and S. Sivananthan, Infrared Physics and Technology 50, 284 (2007)
“Narrow Gap HgCdTe Absorption Behavior Near the Band Gap - Band Nonparabolicity and the Urbach Tail”, Y. Chang, C.H. Grein, S. Sivananthan, M.E. Flatte, V. Nathan and S. Guha, Appl. Phys. Lett. 89, 062109-62109 (2006)
“Electrical and Optical performance of InAs/GaSb superlattice VLWIR detectors”, G.J. Sullivan, J.
Bergman, H. Yang, M. Zhong, M. Weimer, D. Matthews,
M.E. Flatte, and C.H. Grein, SPIE International
Symposium on Lasers and Integrated Optoelectronics, Vol. 6127, 61270v-1, 2006.
“Single- and Two-Color
HgTe/CdTe-Superlattice Based Infrared Detectors”, C.H. Grein, P. Boieriu and
M.E. Flatte, Proceedings of SPIE International
Symposium on Lasers and Integrated Optoelectronics, Vol. 6127, 61270w-1, 2006.
“Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetime in LWIR HgCdTe on Si” P. Boieriu, C. H. Grein, S. Velicu, J. Garland, C. Fulk, A. Stoltz, W. Mason, L. Bubulac, and J. H. Dinan, J. Electron. Mater. 35, 1385 (2006)
“Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetime in LWIR HgCdTe on Si”, P. Boieriu, C. H. Grein, S. Velicu, J. Garland, C. Fulk, A. Stoltz, L. Bubulac, and J. H. Dinan, Appl. Phys. Lett. 88, 062106 (2006)
“P-type HgTe/CdTe Superlattices for Very-Long Wavelength Infrared Detectors”, H. S. Jung, P. Boieriu, C. H. Grein, J. Electron. Mater. 35, 1341-1345 (2006)
“Improved
Molecular Beam Epitaxy Growth of HgCdTe on CdZnTe (211)B Substrates Using
Interfacial Layers of HgTe/CdTe Superlattices” Yong Chang, Christoph H. Grein,
Jun Zhao, Sivalingam Sivananthan, Priyalal
“Compositional
variations in MBE grown InAs-GaSb superlattices for
infrared detector applications”, G.J. Sullivan, J. Bergman, H. Yang, M. Zhong, M. Weimer, D. Matthews, M.E. Flatte,
and C.H. Grein, SPIE Proceedings 5783-13,
(2005)
“Composition and thickness distribution of HgCdTe MBE wafers by infrared microscope mapping", Y. Chang, G. Badano, E. Jiang, J.W. Garland. J. Zhao, C. H. Grein, S. Sivananthan, J. Cryst. Growth 277, 78 (2005)
“Comparison of normal and inverted band structure HgTe/CdTe superlattices for very long wavelength infrared detectors”, C.H. Grein, H. Jung, R. Singh, and M.E. Flatte, J. Electron. Mater 34, 905 (2005)
“MBE Growth of High Quantum Efficiency InAs/GaSb Superlattice Detectors”, G.J. Sullivan, A. Ikhlassi, J. Bergman, R.E. DeWames, J.R. Waldrop, C. Grein, M. Flatté, K. Mahalingam, H. Yang, M. Zhong, and M. Weimer , J. Vacuum Science and Technol. B 23, 1144 (2005)
“Arsenic Activation in
molecular beam epitaxy grown, in-situ Doped HgCdTe(211)”, P. Boieriu, C.H.
Grein, H.S. Jung, J. Garland, and V. Nathan, Applied Phys. Lett.
86, 212106 (2005)
“Performance
and Reproducibility Enhancement of HgCdTe Molecular Beam Epitaxy Growth on
CdZnTe Substrates Using Interfacial HgTe/CdTe Superlattice Layers”, Y. Chang,
J. Zhao, H. Abad, C. H. Grein S. Sivananthan, T. Aoki and David. J. Smith,
Applied
“Monolithically integrated HgCdTe focal plane arrays”, S. Velicu, T.S. Lee, C.H. Grein, P. Boieriu, Y. Chen, N. Dhar, J. Dinan, and D. Lianos, J. Electron. Mater. 34, 820-831 (2005)
“VLWIR Detectors Based on HgTe/CdTe Superlattices”, C.H. Grein and R. Singh, MSS Conference proceedings (2004)
“Arsenic Activation in
MBE In-situ Doped HgCdTe(211)”, P. Boieriu, C.H. Grein, S. Velicu, H.S. Jung,
V. Nathan, N. K. Dhar and S. Sivananthan, MSS Conference proceedings (2004)
“Near-bandgap infrared absorption properties of HgCdTe”, Y. Chang, G. Badano, J. Zhao, Y.D. Zhou, R. Ashokan, C.H. Grein, V. Nathan, J. Electron Mater 33, 709 (2004)
“Microstructural
characterization of HgTe/HgCdTe superlattices”, T. Aoki, M. Takeguchi,
P. Boieriu, R. Singh, C. Grein, Y. Chang, S. Sivananthan and D.J. Smith, J. Cryst. Growth 271,
29 (2004)
“Ex-situ P-type doping technique for HgCdTe superlattice photovoltiac detectors", Y.-D. Zhou, J. Zhao, Y. Chang, R. Ashokan, C. Grein, S. Sivananthan, J. Electron. Mater. 33, 709 (2004)
“HgTe/HgCdTe Superlattices Grown on CdTe/Si by Molecular Beam Epitaxy for Infrared Detection”, Y. Selamet, Y.D. Zhou, J. Zhao, Y. Chang, C.R. Becker, T. Ashokan, C.H. Grein and S. Sivananthan, J. Electron. Mater 33, 503 (2004)
“Defect
characterization for epitaxial HgCdTe alloys by
electron microscopy", T. Aoki, Y. Chang, G. Badano,
J. Zhao, C. Grein, S. Sivananthan, and
“Estimates of impact ionization coefficients in superlattice-based mid-wavelength infrared avalanche photodiodes”, C.H. Grein, K. Abu El-Rub, M.E. Flatte, and H. Ehrenreich, Mat. Res. Soc. Symp. Proc. 799, 153 (2004)
“Formation Mechanisms of Crater Defects on HgCdTe/CdZnTe (211)B Epilayers Grown by Molecular Beam Epitaxy”, Y. Chang, G. Badano, J. Zhao, C. H. Grein, S. Sivananthan, T. Aoki and D. J. Smith, Appl. Phys. Lett. 83, 4785 (2003)
“Electrical and Optical Performance of InAs/GaSb Short Period Superlattice LWIR PIN Diodes”, G.J. Sullivan, J. Bergman, R.E. De Wames, J.R. Waldrop, C. Grein and M. Flatte, proceedings of NAMBE 2003-May/June 2004 issue of the Journal of Vacuum Science and Technology B
“Fabrication and
characteristics of nonequilibrium VLWIR detectors
with HgTe/CdTe superlattice active regions” T. S. Lee, C. Becker ,
C. Grein, S. Sivananthan, V. Nathan, SPIE proceedings Vol. 5209, 75 (2003).
“Monolithically integrated HgCdTe focal plane arrays”, S.Velicu, T.S.Lee, R.Ashokan, C.H. Grein, P.Boieriu,
Y.P.Chen, J.Dinan, D.Lianos, SPIE proceedings Vol. 5209, 14 (2003)
“Superlattices for
very long wavelength infrared detectors”,
H. Jung, C. H. Grein, C. R. Becker, L.
Brown, SPIE proceedings Vol. 5209, 90
(2003).
“Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport", Shaoxin Feng, Christoph H. Grein, and Michael E. Flatte, Phys. Rev. B 68, 885307 (2003)
“Electron Microscopy of Surface Crater Defects on HgCdTe/CdZnTe(211)B Epilayers grown by Molecular Beam Epitaxy", T. Aoki, Y. Chang, J. Zhao, C. Grein, S. Sivananthan, and David J. Smith, J. Electron. Mater. 32, 703 (2003)
“Mercury cadmium telluride/ tellurium intergrowths in HgCdTe epilayers grown by molecular beam epitaxy", T. Aoki, David J. Smith, Y. Chang, J. Zhao , G. Badano, C. Grein, and S. Sivananthan, Appl. Phys. Lett. 82, 2275 (2003).
“Enhancement of Electron-Initiated Impact Ionization in Superlattice-Based Mid- and Long-Wavelength Infrared Avalanche Photodiodes", C.H. Grein, K. Abu El-Rub, and M.E. Flatte, ECS Conference Proceedings PV2002-14, (State-of-the-Art Program on Compound Semiconductors XXXVII (SOTAPOCS XXXVII) / Narrow Bandgap Optoelectronic Materials and Devices) page 80.
“Electronic structure of Te and As covered Si(211)", P. Sen, I.P. Batra, S. Sivananthan, C.H. Grein, N. Dhar, and S. Ciraci, Phys. Rev. B. 68, 45314 (2003).
“Band Engineering of Sb-Based Strained Layer Superlattices for Infrared Avalanche Photodiodes", C.H. Grein, K. Abu El-Rub, M.E. Flatte, and H. Ehrenreich, Proceedings of 26th International Conference on the Physics of Semiconductors, Vol. 171, D77 (2003).
“Modeling of disorder-influenced Auger recombination in strained-layer type II superlattices", C.H. Grein and H. Ehrenreich, J. Appl. Phys. 93, 1075 (2003).
“MBE Growth of HgCdTe HOT Detector Heterostructures", Y. Selamet, A. Ciani, G. Badano, C.H. Grein, and S. Sivananthan, SPIE 4795, 82 (2002).
“Extrinsic p-type Doping and Analysis of HgCdTe Grown
by Molecular Beam Epitaxy", Y. Selamet, A. Ciani, C. H. Grein, and
“Modeling of very long wavelength InAs/GaInSb Strained Layer Superlattice Detectors", C.H. Grein, W.H. Lau, T.L. Harbert, and M.E. Flatte, SPIE 4795, 39 (2002).
“Electronic structure and radiative lifetimes of ideal ZnBeSe alloys", C.H. Grein, R.J. Radke, H. Ehrenreich, C. Chauvet, E. Tournie, and J.P. Faurie, Solid State Communications 123, 209 (2002).
“Auger recombination in narrow-gap semiconductor superlattices incorporating antimony", C.H. Grein, M.E. Flatte, T.C. Hasenberg, J.T. Olesberg, S.A. Anson, L. Zhang, and T.F. Boggess, J. Appl. Phys. 92, 7311 (2002).
“Band Structure Engineering of Superlattice-Based Short-, Mid- and Long-Wavelength Infrared Avalanche Photodiodes for Improved Impact Ionization Rates", K. Abu El-Rub, C.H. Grein, M.E. Flatte, and H. Ehrenreich, J. Appl. Phys. 92, 3771 (2002).
“Finite temperature studies of the Te adsorption on the Si(001) surface", P. Sen, S. Ciraci, I.P. Batra, C.H. Grein, and S. Sivananthan, Surf. Sci. 519, 79 (2002).
“Te covered Si(001): a variable surface reconstruction", P. Sen, S. Ciraci, I.P. Batra, and C.H. Grein, Phys. Rev. B 64, 193310 (2002).
“Electrical activation and electrical properties of arsenic doped Hg1-xCdxTe epilayers grown by MBE", Y. Selamet, G. Badano, C. H. Grein, P. Boieriu, V. Nathan, and S. Sivananthan, SPIE 4454, 71 (2001).
“Band Engineering of Infrared Avalanche Photodiodes
for Improved Impact Ionization Coefficient Ratios", C.H.
“High temperature HgCdTe/CdTe/Si infrared photon detectors by MBE", S. Velicu, R. Ashokan, C.H. Grein, S. Sivananthan, P. Boieriu, and D. Rafol, SPIE 4454, 180 (2001).
“Theoretical comparison of mid-wavelength infrared and long-wavelength infrared lasers", M.E. Flatte, J.T. Olesberg, and C.H. Grein, Phil. Trans. R. Soc. Lond. A 359, 533 (2001).
“Mid-infrared InAs/GaInSb
Separate Confinement Heterostructure Laser Diode Structures", J.T.
“Electrical properties on in-situ As doped HgCdTe epilayers grown by molecular beam epitaxy", Y. Selmat, C.H. Grein, T.S. Lee and S. Sivananthan, Journal of Vacuum Science and Technology B. 19, 1488 (2001).
“HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation", S. Velicu, G. Badano, C.H. Grein, J.P. Faurie, S. Sivananthan, P.Boieriu, Don Rafol, and R. Ashokan, J. Electron. Mater. 30, 711 (2001).
“Impact Ionization Ehancements in AlxGa1-xSb Alalanche Photodiodes", C.H. Grein and H. Ehrenreich, Appl. Phys. Lett. 77, 3048 (2000).
“Uncooled non-equilibrium HgCdTe IR detector modeling", T. Lee, R. Ashokan, C.H. Grein, S. Sivananthan, and S.S. Yoo, submitted for SPIE 4028, (2000).
“Microscopic Model of Impact Ionization in AlxGa1-xSb", C.H. Grein and H. Ehrenreich, SPIE 3948, 200 (2000).
“Correlation of arsenic incorporation and its electrical properties", T.S. Lee, J. Garland, C.H. Grein, M. Sumstine, A. Jandeska, Y. Selamet, and S. Sivananthan, J. Electronic Mater. 29, 869 (2000).
To the UIC Microphysics
Laboratories
To the UIC Physics
Department