American Institute of Chemical Engineers (AlChE)

The Electrochemical Society (ECS)

American Chemical Society (ACS)

Technical Chamber of Greece (TEE)
 
 

Major Professor for Completed Theses:
 

Ph.D. Dissertations

I-Ming Ryan Lee, "Selective Epitaxial Growth of Silicon-Germanium by a Tubular Hot-Wall Low Pressure Chemical Vapor Deposition System," May 1997.

Shannon Chen, "Chloropentafluoroethane Plasma Chemistry and its Effects on the Etch Rates of Silicon Germanium and Silicon Dioxide," December 1999.

Ho Yeung Harry Chan, "Interfacial Chemistry on Transition Metals in Gaseous and Electrochemical Environments as Probed by Surface-Enhanced Raman Spectroscopy" (jointly with Prof. M.J. Weaver), December 1999.

Sanjit S. Dang, "Fundamental Studies on Ultra-Thin Oxynitrides and Nitrides of Silicon and Silicon Germanium," August 2000
 

M.S. Theses

Shri Singhvi, "Process - Property Relationships in Furnace Silicon Oxynitridation in Nitrous Oxide Ambients," May 1997.

Jonathan Madsen, "Ultra Thin Films: Oxidation of Si(100) and SiGe Alloys in O2 and O3 Environments," December 1999.
 
 

Graduate Students Being Supervised:

Zhenjiang Cui, Ph.D. Student, "Process-Property Relationships in the SiGe Thin Film Growth."

Anindya Dasgupta, Ph.D. Student, "Oxynitridation of Silicon and Silicon Germanium."

Thyagarajan Saravanan, M.S. Student, "Ozone Oxidation of Silicon and SiGe."

Balaji Ramamurthi, M.S. Student, "Process - Property Relationships of Silicon Oxynitridation."
 
 

Cui Z., J. Madsen and C.G. Takoudis, "Process-Property Relationshoips in the Rapid Thermal Oxidation of Silicon in Ozone," Appl. Phys. 87, 8181-8186 (2000).

Dang S.S. and C.G. Takoudis, "Rate-limiting Steps during Nitrogen Incorporation in Furnace-grown Silicon Oxynitrides: Effects on Wafer-to-wafer Uniformity ,î Thin Solid Films
366, 225-231 (2000).

Dang S.S. and C.G. Takoudis, "Nitride and Oxynitride of Silicon for Future Ultra-thin Dielectric Applications", MRS Symposium Series, in press (2000).

Madsen J., Z. Cui and C.G. Takoudis, "Low Temperature Oxidation of SiGe in Ozone - Ultra Thin Oxides," J. Appl. Phys. 87, 2046-2051 (2000).

Dang S.S. and C.G. Takoudis, "Angled-Resolved XPS Studies of Interfacial Bonding States in Silicon Oxynitrides Fabricated Using Different Methodologies", MRS Symposium
Series, in press (2000).

Dang S.S. and C.G. Takoudis, "Optimization of Bimodal Nitrogen Concentration Profiles in Silicon Oxynitrides," J. Appl. Phys.,86, 1326-1330 (1999).

Chan H. Y., C.G. Takoudis and M.J. Weaver, ìIn-Situ Monitoring of Chemical Vapor Deposition at Ambient Pressures by Surface-Enhanced Raman Spectroscopy: Initial Growth
of Tantalum(V) Oxide on Platinum," J. Amer. Chem. Soc. 121, 9219-9220 (1999).

Richardson C. and C.G. Takoudis, "Process-Property Relationships of SiC Chemical Vapor Deposition in the Si/H/C/O System," J. Electrochem Soc. 146, 3270-3276 (1999).

 Dang S.S. and C.G. Takoudis, "Optimal Nitrogen Incorporation Near Top and Bottom Surfaces of Ultra-thin Silicon Oxynitrides," Electrochem Soc. 99-6, 185-192 (1999).

Christos G. Takoudis, Sanjit Singh Dang, Gerd Duscher, Nigel D. Browning, and Stephen J. Pennycook, "Silicon Suboxide Growth Over Planar SiO2/Si Interface in Pure N2O
Ambients," Electrochem Soc. 99-6, 240-249 (1999).

Dang S.S. and C.G. Takoudis, "Gas and Solid Phase Variations in Silicon Oxynitridation Along a Furnace Length," Electrochem Soc. 99-6, 143-154 (1999).

Dang S.S. and C.G. Takoudis, "Instruction via Web-Based Semiconductor Simulation Tools," Chem. Eng. Educ.  32, 242-245 (1998).

G. Duscher, S.L. Pennycook, N.D. Browning, R. Rupangudi, C.G. Takoudis, H.J. Gao, and R. Singh, "Structure, Composition and Strain Profiling of Si/SiO2 Interfaces,"
Proceedings of 1998 International Conference on Characterization and Metrology for ULSI Technology,  Gaithersburg, MD, 151 (1998).

Wang W.-C., J.P. Denton, G.W. Neudeck, I-M. Lee, C.G. Takoudis, M.T.K. Koh, and E.P. Kvam, "Selective Epitaxial Growth of Si1-xGex/Si Strained-Layers in a Tubular
Hot-Wall LPCVD System," J. Vac. Sci. Techn. B 15, 138-141 (1997).

Lee I-M., W.-C. Wang, M.T.K. Koh, J.P. Denton, E.P. Kvam, G.W. Neudeck, and C.G. Takoudis, "Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular
Hot-Wall Low Pressure Chemical Vapor Deposition Systems," MRS Symposium Series 448, 265-270 (1997).

Lee I-M., C.G. Takoudis, W.-C. Wang, J.P. Denton, G.W. Neudeck, M.T.K. Koh, and E.P. Kvam, "Process Improvements in the Selective Epitaxial Growth of Si1-xGex/Si
Strained-Layers in a Conventional Hot-Wall LPCVD System," J. Electrochem Soc. 144, 1095-1099 (1997).

Kongetira P., G.W. Neudeck and C.G. Takoudis, "An Expression for the Growth Rate of Selective Epitaxial Growth of Silicon Using Dichlorosilane-HCl-H2 in a LPCVD Pancake
Reactor," J. Vac. Sci. Techn. B 15, 1902-1907 (1997).

Singhvi S. and C.G. Takoudis, "Growth Kinetics of Furnace Silicon Oxynitridation in Nitrous Oxide Ambients," J. Appl. Phys. 82, 442-448 (1997).

Lee I-M., A. Jansons and C.G. Takoudis, " Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition - Thermodynamic
Analysis," J. Vac. Sci. Techn. B 15, 880-885 (1997).

Geiger C.D., R. Hase, C.G. Takoudis and R. Uzsoy, "Alternative Facility Layouts for Semiconductor Wafer Fabrication Facilities," IEEE/Comp. Pack. Manuf. Technol. Part C
20, 152-163 (1997).

Panczyk C. and C.G. Takoudis, "Emission Infrared Spectroscopy as an In Situ Probe of CVD at High Gas Pressures - The Epitaxial Silicon CVD," Electrochem. Soc. 97-25,
652-659 (1997).

Lee I-M., W.C. Wang, J.P. Denton, M.T.K. Koh, C.G. Takoudis, E.P. Kvam, and G.W. Neudeck, "Selective Epitaxial Growth of SiGe Films in LPCVD Reactor Systems -
Characterization of SiGe Films by Ellipsomety," Electrochem Soc.97-25, 1348-1355 (1997).

Lee I-M. and C.G. Takoudis, "Analysis and Characterization of Native Oxide Growth on Epitaxial SiGe Films after a Chemical Clean," J. Vac. Sci. Techn. A 15, 3154-3157
(1997).

Singhvi S. and C.G. Takoudis, "Furnace Silicon Oxynitridation in Nitrous Oxide Ambients," Electrochem Soc. 97-25, 1364-1371 (1997).

Lee I-M., A. Jansons and C.G. Takoudis, "Water Vapor and Chlorine Effects on the Epitaxial Growth of SiGe Films by CVD," Electrochem Soc. 97-25, 123-130 (1997).
 
 

Dang S.S. and C.G. Takoudis, "Nitrogen Incorporation Near Top and Bottom Surfaces of Ultra-Thin Silicon Oxynitrides," Proceedings of 1st International Conference on Microelectronics and Interfaces, American Vacuum Society, Santa Clara, CA, in press (2000).

Dang S.S. and C.G. Takoudis, "O2-Enhanced Thermal Removal of Nitrogen from Silicon Oxynitrides," Proceedings of 1st International Conference on Microelectronics and Interfaces, American Vacuum Society, Santa Clara, CA, in press (2000).

Cui Z., J. Madsen and C.G. Takoudis, "Process-Property Relationships of the Si(100) and SixGe1-x Oxidation in Ozone at Low Temperatures," Proceedings of 1st International Conference on Microelectronics and Interfaces, American Vacuum Society, Santa Clara, CA, in press (2000).

Lundstrom M.S., G.W. Neudeck, J.A.B. Fortes and Takoudis C.G, "WWW-Based Computation in Microelectronic Education and Research," Proceedings of the University / Government / Industry Microelectronics Symposium, Minneapolis, MN, 106-109 (1999).

Dang S.S. and C.G. Takoudis, "Nitrous Oxide-Based Progressive Silicon Oxynitridation in Furnaces of Different Dimensions," Proceedings of the Second International Conference on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators, San Juan, Puerto Rico, 177-181 (1999).

Dang S.S. and C.G. Takoudis, "Nitrogen Incorporation Near Top and Bottom Surfaces of Ultra-thin Silicon Oxynitrides," Proceedings of the 195th Electrochemical Society Meeting, Seattle, Washington, 138 (1999).

Christos G. Takoudis, Sanjit Singh Dang, Gerd Duscher, Nigel D. Browning, and Stephen J. Pennycook, "On the Silicon Suboxide Growth Over Planar SiO2/Si Interface in Pure N2O Ambients," Proceedings of the 195th Electrochemical Society Meeting, Seattle, Washington, 146 (1999).

Dang S.S. and C.G. Takoudis, "Gas and Solid Phase Variations in Silicon Oxynitridation Process Along a Furnace Length," Proceedings of the 195th Electrochemical Society Meeting, Seattle, Washington, 135 (1999).

Dang S.S., C.G. Takoudis, G. Duscher, N.D. Browning and S.J. Pennycook, "Growth of Silicon Suboxides Above Atomically Abrupt SiO2/Si(100) Interfaces," Proceedings of Second Panhellenic Scientific Conference in Chemical Engineering, Thessaloniki, Greece, 37-40 (1999).

Chan H-Y. H., M.J. Weaver and C.G. Takoudis, "Electrochemical Oxidation of Copper at Different pH and Potentials as Probed by Surface-Enhanced Raman Spectroscopy," Proceedings of Second Panhellenic Scientific Conference in Chemical Engineering, Thessaloniki, Greece, 1-4 (1999).

G. Duscher, S.L. Pennycook, N.D. Browning, R. Rupangudi, C.G. Takoudis, H.J. Gao, and R. Singh, "Structure, Composition and Strain Profiling of Si/SiO2 Interfaces," Characterization and Metrology for ULSI Technology: 1998 International Conference, Ed. by D.G. Seiler et al., CP449,  191-195 (1998).

I-Ming Lee,W. C. Wang, M.T.K. Koh, J.P. Denton, E.P. Kvam, G.W. Neudeck, and C.G. Takoudis, "Selective Epitaxial Growth of Sil-xGex Films in Conventional Low Pressure Chemical Vapor Deposition Systems," Proceedings of First Panhellenic Scientific Conference in Chemical Engineering, Patras, Greece, 43-48 (1997).

Hesketh P.J., J.G. Boyd, M.J. MacNallan, G.J. Maclay and C.G. Takoudis, "Integration of MEMS Courses into an Engineering Curriculum," Proceedings of International Conference on Engineering Education, Chicago, IL., 120-132 (1997).
 
 

Microfabrication Techniques

Thin Film Growth

Heteroepitaxy in Group IV Materials

Chemical Sensors and Biosensors

Surface Chemistry

Novel Dielectrics
 
 

Our group's major thrust is relationships among processing, properties and structure as well as the development of new materials and processes. Objectives include novel substrate surface cleaning techniques, kinetics and surface chemistry of reaction processes on silicon substrate surfaces, controlled production of thin heterostructure layers, and design of new material systems for fabrication of group IV-based optical, electronic and micro-electro-mechanical systems. Systems of interest include silicon selective epitaxial growth, silicon-germanium growth, ultra-thin silicon oxynitride films, novel ultra-thin dielectrics, and in situ probing of surface chemical phenomena during the thin film growth of microelectronic materials.